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Hoofdkenmerken

Auteur:	Schubert, E. F.
Titel:	Doping in III-V Semiconductors
Uitgever:	Cambridge University Press
ISBN:	9780521419192
Serie:	Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Land van oorsprong:	United Kingdom
Prijs:	€ 227,23
Verschijningsdatum:	30-09-1993
Bericht:	Langere levertijd (2-3 weken)

Inhoudelijke kenmerken

Leesniveau:	Professional & Vocational
Categorie:	Electronic devices & materials
Geillustreerd:	1 Tables, unspecified; 240 Line drawings, unspecified

Technische kenmerken

Verschijningsvorm:	Hardback
Paginas:	632
Hoogte mm.:	234
Breedte mm.:	157
Dikte mm.:	36
Gewicht gr.:	1016

 

Inhoud:

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III-V semiconductors are presented.